Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer
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概要
- 論文の詳細を見る
We have investigated a charge-trapping nonvolatile memory (NVM) device with high-$k$ dielectrics as a charge-trapping layer (HfO2 and Dy-doped HfO2) and a blocking layer (Al2O3). Compared with a conventional SiO2/Si3N4/SiO2 stack, both SiO2/HfO2/Al2O3 and SiO2/Dy-doped HfO2/Al2O3 stacks show significantly improved program and erase ($P/E$) speed. The improvement in $P/E$ speed characteristics can be explained by the larger band offset of HfO2 and the increased thickness of the blocking oxide, which are the main advantages of high-$k$ materials. Moreover, for a SiO2/Dy-doped HfO2/Al2O3 stack with an optimum Dy concentration, the enhanced retention characteristics were observed at a measurement temperature below 150°C due to the deep energy level of the charge trap.
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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Samantaray Chandan
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Jeon S
Md Laboratory Samsung Advanced Institute Of Technology
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Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Kim Chungwoo
Md Laboratory Samsung Advanced Institute Of Technology
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JEON Sanghun
MD laboratory, Samsung Advanced Institute of Technology
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Cho Myungjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Cho Myungun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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