Samantaray Chandan | Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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概要
- 同名の論文著者
- Department Of Materials Science And Engineering Gwangju Institute Of Science And Technologyの論文著者
関連著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Samantaray Chandan
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Sim Hyunjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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Lee Taeho
Materials Science And Engineering Hanyang University
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Yeom Hanwoong
Institute Of Physics And Applied Physics Yonsei University
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Jeon S
Md Laboratory Samsung Advanced Institute Of Technology
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Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Kim Chungwoo
Md Laboratory Samsung Advanced Institute Of Technology
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JEON Sanghun
MD laboratory, Samsung Advanced Institute of Technology
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Cho Myungjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Lee Taeho
Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Yeom Hanwoong
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
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Cho Myungun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Samantaray Chandan
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Gwangju 500-712, Korea
著作論文
- Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer
- Electrical and Structural Characteristics of High-$k$ Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111)