High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-01
著者
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JEON Sanghun
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Jeon Sanghun
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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CHOI Sangmoo
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi S
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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CHO Myungjun
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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HWANG Hyusang
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Cho Myungjun
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Cho Myungjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyusang
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
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- High-$k$ Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-$k$ Gate Dielectric
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2
- Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance
- Electrical Characteristics of Metal–Oxide–Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO2