Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current–Voltage and Capacitance–Voltage Measurements
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概要
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We investigated the electrical properties of a Pt/Nb-doped SrTiO3 (Nb:STO) single crystal Schottky junction. The junction exhibited highly rectifying current–voltage ($I$–$V$) characteristics under a DC bias. To make a junction profile, the capacitance–voltage ($C$–$V$) curve for reverse bias was measured — the curve showed little change in Schottky barrier height. The large leakage current problem of Nb:STO oxide was overcome using an ultrathin metal–oxide–semiconductor (MOS) capacitor model. On the basis of our results and previous reports, we propose a plausible mechanism for a Pt/Nb:STO Schottky junction, where the tunneling effect is the main cause of the switching.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dongsoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Seong Dong-jun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Yoon Jaesik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Pyun Myungbum
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Seong Dong-jun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee Dongsoo
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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