Low-Temperature-Activated Bismuth Ion-Implanted Silicon n+/p Junction
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概要
- 論文の詳細を見る
Solid-phase epitaxially regrown n+/p junctions were investigated for sub-70 nm metal–oxide–semiconductor field-effect transistors (MOSFETs) using bismuth (Bi) ion implantation and low-temperature rapid thermal annealing. These junctions showed a small junction depth, a low sheet resistance and leakage current in low-temperature processing (700°C). The results indicated the possibility of Bi as a proper dopant for low-temperature-activated source and drain extensions that should be fabricated at a low temperature with the presence of high-$k$ dielectric metal-electrode gate stacks in next generation MOSFETs.
- 公益社団法人 応用物理学会の論文
- 2005-01-15
著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Baek Sungkweon
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology (gist)
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Baek Sungkweon
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-Dong, Buk-Gu, Gwang-Ju 500-712, Republic of Korea
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-Dong, Buk-Gu, Gwang-Ju 500-712, Republic of Korea
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Ghanad Tavakoli
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-Dong, Buk-Gu, Gwang-Ju 500-712, Republic of Korea
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