Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D_2O
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概要
- 論文の詳細を見る
In this letter, we present a novel gate oxidation process using D_2O (deuterium oxide) as an oxidizing gas. The electrical and reliability characteristics of ultrathin gate oxide grown in D_2O ambient have been investigated. Compared with a control oxide grown in H_2O, a oxide grown in D_2O exhibits a significant reduction of charge trapping and interface state generation. Based on a secondary ion mass spectroscopy (SIMS) analysis, we found a deuterium rich-layer at the Si/SiO_2 interface. The improvement of electrical and reliability characteristics can be explained by the deuterium incorporation at the Si/SiO_2 interface.
- 社団法人応用物理学会の論文
- 1999-02-01
著者
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang H
Kwangju Inst. Sci. And Technol. Kwangju Kor
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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KIM Hyojune
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Kim Hyojune
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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