Ultrashallow Arsenic n〔+〕/p Junction Formed by AsH3 Plasma Doping

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Heo Sungho

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

関連論文

• Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2
• Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping
• Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
• Ultrashallow Arsenic n〔+〕/p Junction Formed by AsH3 Plasma Doping
• Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
• Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2
• Ultrashallow Arsenic n+/p Junction Formed by AsH3 Plasma Doping

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