Fluorine Induced Reliability Degradation of W-polycide Gate CMOS Device
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概要
- 論文の詳細を見る
- 1995-11-30
著者
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Hwang Hyunsang
Advanced Technology Laboratory., LG Semicon Co.,
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LEE Kye-Nam
Advan. Tech. Lab., LG Semicon Co., Ltd.
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Hwang Hyunsang
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Yang Dooyoung
Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd.
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Yang Dooyoung
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Lee Kye-nam
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Lee Kye-nam
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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BYUN JeongSoo
Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd.
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Byun Jeongsoo
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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- Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis
- Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's
- Fluorine Induced Reliability Degradation of W-polycide Gate CMOS Device