Choi Rino | Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

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概要

• Choi Rinoの詳細を見る
• 同名の論文著者
• Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Koreaの論文著者

関連著者

• Choi Rino

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Kim Tea

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Park Hokyung

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Hwang Hyunsang

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• BERSUKER Gennadi

  SEMATECH

• Lee Byoung

  Sematech

• Jeong Jae

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Jang Tae-Young

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Kim Dong-Hyoub

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Kim Jung-Woo

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Lee Byoung

  Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

• Park Hokyung

  SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

• Hwang Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Choi Rino

  Inha University, Incheon 402-751, Korea

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著作論文

• Effect of Trap Profile on Device Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors with Hafnium-Based Dielectrics
• Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric
• Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor

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