Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric

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概要

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• The negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBTI) of metal–oxide–semiconductor field-effect transistors (MOSFETs) with high dielectric constant ($k$) gate dielectrics have been studied by varying the physical thickness of high-$k$ dielectric. Both PBTI and NBTI were reduced with decrease in the high-$k$ dielectric thickness, but NBTI reduction saturated in the thin high-$k$ region. Since residual NBTI is sufficiently large to cause device instability, NBTI is still a dominant reliability concern in scaled MOSFETs.

• 2009-09-25

著者

• Kim Tea

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Choi Rino

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Lee Byoung

  Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea

• Park Hokyung

  SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

関連論文

• Effect of Trap Profile on Device Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors with Hafnium-Based Dielectrics
• Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric
• Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor

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