Effect of Trap Profile on Device Characteristics of Metal–Oxide–Semiconductor Field Effect Transistors with Hafnium-Based Dielectrics

概要

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The trap properties and performance of metal–oxide–semiconductor field effect transistors (MOSFETs) with either a HfSiO or HfO2 dielectric were determined using single-pulse $I_{\text{d}}$–$V_{\text{g}}$ and charge pumping measurements. The HfSiO dielectric shows a lower bulk trap density and a lower interface trap density than the HfO2 dielectric. Particularly, the trap depth profile as a function of distance from the Si/SiOx interface, which is obtained using frequency-dependent charge pumping measurements, shows a marked reduction in trap density in the HfSiO dielectric, unlike in the HfO2 dielectric. This significant reduction in trap density close to the Si/SiOx interface can contribute to the improvement in the carrier mobility of MOSFETs with a HfSiO dielectric.
2010-10-25