Hwang Hyunsang | Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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概要
- Hwang Hyunsangの詳細を見る
- 同名の論文著者
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Koreaの論文著者
関連著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Heo Sungho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dongkyu
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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Yang Hyundoek
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Heo Sungho
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Park Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Rino
SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, U.S.A.
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Lee Dongkyu
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
著作論文
- Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2