Microwave Dielectric Properties of CaTiO3 and MgTiO3 Thin Films

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The CaTiO3 and MgTiO3 films were prepared by a sol-gel method, and the effect of annealing temperature on the microwave dielectric properties of both films was investigated. It was possible to obtain well-crystallized CaTiO3 and MgTiO3 films with no evidence of secondary phases at 800°C. The dielectric constants ($\varepsilon_{\text{r}}$) and temperature coefficients of dielectric constant (TCK) of crystalline CaTiO3 and MgTiO3 films were found to increase with an increase in annealing temperature while the dielectric losses (tan $\delta$) tended to decrease in the microwave frequency region. This result was attributed to the enhanced crystallinity and grain size with increasing annealing temperature. $\varepsilon_{\text{r}}$, tan $\delta$ and TCK of CaTiO3 films were about 160, $0.003 \pm 0.0003$ and $-1340$ ppm/°C at 1–6 GHz. But the MgTiO3 films showed the values of $\varepsilon_{\text{r}} \sim 16$, $\tan \delta \sim 0.0008 \pm 0.0001$ and $\text{TCK} \sim +260$ ppm/°C, respectively.
2003-09-15