Interfacial Phenomena in Vacuum-Deposited Metal Films on Silicon Substrate
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Pure nickel and gold thin films were vacuum-deposited on (111) silicon single crystals. When Ni/Au/Si samples were heated to about 550℃ in vacuum, crystallites of NiSi_2 were formed on the silicon substrates. The silicon substrate doped with antimony showed stacking faults, while the silicon substrate doped with phosphorus did not show stacking faults.
- 社団法人応用物理学会の論文
- 1982-12-20
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