Electric Fatigue in Antiferroelectric and Ferroelectric Pb(Zr, Sn, Ti)NbO3 Thin Films Prepared by Sol-Gel Process
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概要
- 論文の詳細を見る
The fatigue behavior in the sol-gel derived Pb0.99[(Zr0.6Sn0.4)0.97Ti0.03]0.98Nb0.02O3 (40/3/2) and Pb0.99[(Zr0.6Sn0.4)0.85Ti0.15]0.98Nb0.02O3 (40/15/2) thin films deposited on the platinized silicon substrates was investigated. The thin film of the 40/3/2 composition represented a double hysteresis loop, while the 40/15/2 composition represented a single ferroelectric hysteresis loop. The thin film having the antiferroelectric phase showed less fatigue than that having the ferroelectric phase. It can be explained that the antiferroelectrics have less stress due to 180° domain switching compared to the ferroelectrics.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-09-30
著者
-
Yoon Ki
Department Of Biotechnology The University Of Tokyo
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Jang Jae
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
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