Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study
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概要
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We have investigated crystallization processes during excimer laser annealing of silicon (Si) thin films on glass by molecular-dynamics simulations and laser power dependence of the polycrystalline Si grain size was discussed. The temperature range for the highest growth rate was found to be approximately 500 degrees higher than that for the highest nucleation rate. It was also found that a steady state temperature gradient was obtained in the direction of the surface normal during laser irradiation. These results suggest that nucleation occurs in the Si/glass interface region and then crystallization proceed toward the high temperature region during laser irradiation in the near-complete melting condition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
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MOTOOKA Teruaki
Department of Materials Science & Engineering, Kyushu University
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Lee Byoung
Department Of Ceramic Engineering Yonsei University
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Munetoh Shinji
Department Of Materials Science And Engineering Faculty Of Engineering Kyushu University
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Endo Takahiko
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Warabisako Terunori
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Kuranaga Takahide
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan
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Motooka Teruaki
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan
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Endo Takahiko
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Lee Byoung
Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan
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