Growth of Ultrathin Epitaxial 3C-SiC Films on Si(100) by Pulsed Supersonic Free Jets of CH_3SiH_3
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概要
- 論文の詳細を見る
We have developed a new method for epitaxial growth of ultrathin (〜nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH_3SiH_3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH_3SiH_3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than ≈40nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.
- 社団法人応用物理学会の論文
- 1999-03-15
著者
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Endo Takao
Department Of Materials Science And Engineering Kyushu University
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MOTOOKA Teruaki
Department of Materials Science & Engineering, Kyushu University
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WATANABE Fumiya
Department of Materials Science and Engineering, Kyushu University
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IKOMA Yoshifumi
Department of Materials Science and Engineering, Kyushu University
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Ikoma Yoshifumi
Department Of Materials Science And Engineering Kyushu University
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Motooka Teruaki
Department Of Materials Science And Engineering Kyushu University
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Endo Takao
Department Of Internal Medicine (section I) Sapporo Medical University School Of Medicine
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Watanabe F
Department Of Materials Science And Engineering Kyushu University
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Watanabe Fumiya
Department Of Horticulture Minami Kyushu University
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