Rare-Earth Doping in SiC for Light-Emitting Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-12-30

著者

• MOTOOKA Teruaki

  Department of Materials Science & Engineering, Kyushu University

• Pietsch Walter

  Department Of Materials Science And Engineering Kyushu University

• Aramaki Takeo

  Department Of Materials Science And Engineering Kyushu University

関連論文

• Raman Spectroscopy and Positron Lifetime Studies of Structural Relaxation and Defect Evolution in Amorphous Silicon
• Role of Vacancy-Type Defects during Structural Relaxation of Amorphous Si
• Diamond Tip Arrays for Parallel Lithography and Data Storage
• Growth of Ultrathin Epitaxial 3C-SiC Films on Si(100) by Pulsed Supersonic Free Jets of CH_3SiH_3
• Rare-Earth Doping in SiC for Light-Emitting Devices
• Formation of Si/SiC Heterostructures on Si(100) by Hot-Filament-Assisted CH3SiH3 Gas Jet Chemical Vapor Deposition
• New Method to Obtain (001) Surface-Oriented Polycrystalline Silicon Films by Intensity-Modulated Excimer Laser Annealing: Molecular Dynamics Study
• Nucleation and Crystal Growth of Si1-xGex Melts during Rapid Cooling Processes: A Molecular-Dynamics Study
• Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study
• Visible Cathode Luminescence of Oxidized Dy-Doped Si Films

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