Formation of Si/SiC Heterostructures on Si(100) by Hot-Filament-Assisted CH3SiH3 Gas Jet Chemical Vapor Deposition
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概要
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We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850 °C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850 °C with the assistance of a tungsten hot-filament at ${\sim}1800$ °C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH3SiH3 jet irradiation.
- 2006-04-15
著者
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MOTOOKA Teruaki
Department of Materials Science & Engineering, Kyushu University
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Ikoma Yoshifumi
Department Of Materials Science And Engineering Kyushu University
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Ikoma Yoshifumi
Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
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Ohtani Ryota
Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
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Motooka Teruaki
Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
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