Characterization of High-Performance Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Circuits
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Nakazaki Yoshiaki
Advanced Lcd Technology Development Center Co. Ltd.
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KAWACHI Genshiro
Advanced LCD Technology Development Center Co., Ltd.
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OGAWA Hiroyuki
Advanced LCD Technology Development Center Co., Ltd.
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JYUMONJI Masayuki
Advanced LCD Technology Development Center Co., Ltd.
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AKITA Noritaka
Advanced LCD Technology Development Center Co., Ltd.
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HIRAMATU Masato
Advanced LCD Technology Development Center Co., Ltd.
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AZUMA Kazufumi
Advanced LCD Technology Development Center Co., Ltd.
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WARABISAKO Terunori
Advanced LCD Technology Development Center Co., Ltd.
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MATSUMURA Masakiyo
Advanced LCD Technology Development Center Co., Ltd.
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Matsumura Masakiyo
Advanced Lcd Technology Development Center Co. Ltd.
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Akita Noritaka
Advanced Lcd Technology Development Center Co. Ltd.
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Azuma Kazufumi
Advanced Lcd Technologies Development Center Co. Ltd.
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Azuma Kazufumi
Advanced Lcd Technology Development Center Co. Ltd.
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Hiramatu Masato
Advanced Lcd Technology Development Center Co. Ltd.
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Kawachi Genshiro
Advanced Lcd Technology Development Center Co. Ltd.
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Jyumonji Masayuki
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Jyumonji Masayuki
Advanced Lcd Technology Development Center Co. Ltd.
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Warabisako Terunori
Advanced Lcd Technology Development Center Co. Ltd.
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Ogawa Hiroyuki
Advanced Lcd Technology Development Center Co. Ltd.
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Warabisako Terunori
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Ogawa Hiroyuki
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Kawachi Genshiro
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Akita Noritaka
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
関連論文
- Characterization of High-Performance Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Circuits
- Characterization of Novel Polycrystalline Silicon Thin-Film Transistors with Long and Narrow Grains
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- Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
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- Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization
- New Phase Modulators for Next-Generation Low-Temperature Crystallization Method of Si Films
- Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors
- Ultralong Silicon Grains Grown by Excimer Laser Crystallization
- Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
- High-Frequency Thin-Film Transistor Circuits for System Displays
- Surface Wave Plasma Oxidation at Low Temperature under Rare Gas Dilution
- Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films
- Characterization of Novel Polycrystalline Silicon Thin-Film Transistors with Long and Narrow Grains
- Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study
- Proposed Phase-Modulator Check System for Phase-Modulated Excimer-Laser Annealing
- Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
- Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films
- Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
- New Widening Method of Depth of Focus for Phase-Modulated Excimer-Laser Crystallization
- Importance of Pure Si Films in Pulsed-Laser-Induced Lateral Growth