Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-02-15
著者
-
OGAWA Hiroyuki
Advanced LCD Technology Development Center Co., Ltd.
-
JYUMONJI Masayuki
Advanced LCD Technology Development Center Co., Ltd.
-
MATSUMURA Masakiyo
Advanced LCD Technology Development Center Co., Ltd.
-
Taniguchi Yukio
Advanced Lcd Technologies Development Center Co. Ltd. (altedec)
-
HIRAMATSU Masato
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC)
-
KIMURA Yoshinobu
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC)
関連論文
- Characterization of High-Performance Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Circuits
- Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors
- Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
- High-Resolution Beam Profiler for Engineering Laterally-Grown Grain Morphology(Electronic Displays)
- High-Resolution Beam Profiler for Engineering Laterally-Grown Grain Morphology
- Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization
- New Phase Modulators for Next-Generation Low-Temperature Crystallization Method of Si Films
- Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors
- Ultralong Silicon Grains Grown by Excimer Laser Crystallization
- Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films
- Proposed Phase-Modulator Check System for Phase-Modulated Excimer-Laser Annealing
- Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
- Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films
- New Widening Method of Depth of Focus for Phase-Modulated Excimer-Laser Crystallization
- Importance of Pure Si Films in Pulsed-Laser-Induced Lateral Growth