Importance of Pure Si Films in Pulsed-Laser-Induced Lateral Growth
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概要
- 論文の詳細を見る
We have investigated the effects of impurities in starting silicon films on excimer-laser-induced lateral growth characteristics. The films should have a low concentration of impurities to achieve long lateral growth, since impurities, such as carbon, nitrogen, oxygen, and fluorine, in the films were found to affect the lateral growth characteristics severely. A stacked structure with a capping layer is also considered essential for maintaining pure molten Si during lateral growth.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Akita Noritaka
Advanced Lcd Technology Development Center Co. Ltd.
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KIMURA Yoshinobu
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC)
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Hiramatsu Masato
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Jyumonji Masayuki
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Katou Tomoya
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Ogawa Hiroyuki
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Akita Noritaka
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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- Importance of Pure Si Films in Pulsed-Laser-Induced Lateral Growth