Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
A high-purity hydrogenated amorphous silicon film has been successfully deposited using an advanced plasma-enhanced chemical vapor deposition system that is available for mass-production use. Oxygen and carbon concentrations in the film were as low as $1.3\times 10^{17}$ and $2.6\times 10^{16}$ atoms/cm3, respectively, i.e., about hundredth part of the typical values achieved using a recent large-area deposition system and as low as those in CZ-Si wafers. The film was characterized as a function of SiH4 gas flow rate and outgas rate from the reaction chamber, and the results suggest that oxygen and carbon in the film comes predominantly from H2O and CO2 out-gassing from the chamber wall, respectively.
- 2005-06-15
著者
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Nishitani Mikihiko
Advanced Lcd Technologies Development Center Co. Ltd. (altedec)
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KIMURA Yoshinobu
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC)
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Hiramatsu Masato
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Jyumonji Masayuki
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Nishitani Mikihiko
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), Fukaya, Saitama 366-0032, Japan
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Hiramatsu Masato
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), Fukaya, Saitama 366-0032, Japan
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Matsumura Masakiyo
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), Fukaya, Saitama 366-0032, Japan
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Jyumonji Masayuki
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), Fukaya, Saitama 366-0032, Japan
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Kimura Yoshinobu
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), Fukaya, Saitama 366-0032, Japan
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