Ultralong Silicon Grains Grown by Excimer Laser Crystallization
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概要
- 論文の詳細を見る
The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, particularly at its tail region, and the sample structure. Grains as long as 25 μm were successfully grown at room temperature using a combination of a V-shaped light intensity profile, a light pulse waveform with a long tail, and a stacked sample structure with a cap layer. Grains of 11 μm in length were also grown in a capless sample.
- 2008-10-25
著者
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Taniguchi Yukio
Advanced Lcd Technologies Development Center Co. Ltd. (altedec)
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Azuma Kazufumi
Advanced Lcd Technologies Development Center Co. Ltd.
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Katou Tomoya
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Endo Takahiko
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Shimoto Shigeyuki
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Ohno Takashi
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Shimoto Shigeyuki
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Endo Takahiko
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Ohno Takashi
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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