Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating
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概要
- 論文の詳細を見る
It was observed that the bias stressing of low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) gave rise to anomalous instabilities in device characteristics, such as negative threshold voltage shifts in both n- and p-channel TFTs, and the recovery of the shift even under stress. From detailed investigations of these phenomena, it was found that the instability is caused by self-heating due to the drain current, and is related to hydrogen and/or water diffusing into the gate oxide from the interlayer dielectric. It is considered that these phenomena will become more significant in future scaled TFTs; therefore, it is important that low-temperature processes taking account of water-related components are carefully introduced.
- 2011-03-25
著者
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Kawachi Genshiro
Advanced Lcd Technology Development Center Co. Ltd.
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Tsuchiya Toshiaki
Interdisciplinary Faculty Of Science And Engineering Shimane University
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Tsuboi Shinzo
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Tsuboi Shinzo
Advanced LCD Technology Development Center Co., Ltd., Kawasaki 212-0013, Japan
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Kawachi Genshiro
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Kawachi Genshiro
Advanced LCD Technology Development Center Co., Ltd., Kawasaki 212-0013, Japan
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Tsuchiya Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan
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