High-Frequency Thin-Film Transistor Circuits for System Displays
スポンサーリンク
概要
- 論文の詳細を見る
Thin-film transistor (TFT) circuits with unprecedented high-frequency performances were fabricated. Based on sub-micron TFTs on phase-modulated-eximer-laser-annealing (PMELA) crystallized silicon films, low-voltage-differential-signaling (LVDS) receivers and low-noise-amplifiers (LNAs) were fabricated. The LVDS receivers can handle a data rate as high as 800 Mbps, and the maximum power gain of the LNAs is 19.8 dB at 1.33 GHz.
- 2009-03-25
著者
-
Kawachi Genshiro
Advanced Lcd Technology Development Center Co. Ltd.
-
Miyano Soichiro
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
-
Miyano Soichiro
Advanced LCD Technology Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
-
Kitagishi Yoichi
Advanced LCD Technology Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
-
Okada Takashi
Advanced LCD Technology Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
-
Kawachi Genshiro
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
-
Kawachi Genshiro
Advanced LCD Technology Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
-
Okada Takashi
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
関連論文
- Characterization of High-Performance Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Circuits
- Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating
- Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
- High-Frequency Thin-Film Transistor Circuits for System Displays
- Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films
- Characterization of Novel Polycrystalline Silicon Thin-Film Transistors with Long and Narrow Grains
- Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors
- Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains