Irradiation Damage in SiO2/Si System Induced by Photons and/or Ions in Photo-Oxidation and Plasma-Oxidation

概要

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Irradiation damage in an SiO2/Si system induced by photons and/or ions was evaluated. The flat-band voltage ($V_{\text{fb}}$) was not shifted and the interface density of states ($D_{\text{it}}$) was increased by irradiation of 172-nm-wavelength light, which corresponds to a photo-oxidation condition. Surface wave plasma (SWP) excited using microwave with Kr gas has an electron temperature less than 1 eV. However, $V_{\text{fb}}$ was shifted and $D_{\text{it}}$ was increased by the irradiation of photons from Kr plasma, which corresponds to a plasma-oxidation condition. $V_{\text{fb}}$ was not shifted and $D_{\text{it}}$ was increased by the irradiation of ions from Kr plasma. However, the SiO2/Si interface formed by photo-oxidation had a $D_{\text{it}}$ of $3\times 10^{10}$ cm-2eV-1, which is equal to that of a SiO2/Si interface formed by a thermal-oxidation. This means that photo-oxidation forms the SiO2/Si interface by a concerted reaction of the photo-oxidation and the irradiation.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-12-15