Excimer Laser Crystallization Processes of Amorphous Silicon Thin Films by Using Molecular-dynamics Simulations

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概要

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• Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled l-Si region in the near-complete-melting condition.

• 社団法人 日本鉄鋼協会の論文
• 2010-12-15

著者

• Ping Xiao

  Department Of Materials Science And Engineering Faculty Of Engineering Kyushu University

• Ogata Tomohiko

  Department Of Materials Science And Engineering Faculty Of Engineering Kyushu University

• Teranishi Ryo

  Department Of Materials Science And Engineering Faculty Of Engineering Kyushu University

• MUNETOH Shinji

  Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University

• MOTOOKA Teruaki

  Kyushu University Cleanroom Laboratory Facility, Kyushu University

• Motooka Teruaki

  Kyushu University Cleanroom Laboratory Facility Kyushu University

• Munetoh Shinji

  Department Of Materials Science And Engineering Faculty Of Engineering Kyushu University

関連論文

• Excimer Laser Crystallization Processes of Amorphous Silicon Thin Films by Using Molecular-dynamics Simulations
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• Formation of Microstructures and Continuous Heating and Time–Temperature Transformation Diagrams of YBa2Cu3O7-x Film Fabricated by Metal Organic Deposition with Trifluoroacetates
• Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

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