A Technology for Reducing Flicker Noise for ULSI Applications
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概要
- 論文の詳細を見る
It is demonstrated that the formation of the atomic scale flattened Si/SiO2 interface is effective in reducing the Flicker noise in n-channel metal oxide semiconductor field effect transistors (n-MOSFETs). The atomic scale flattened Si/SiO2 interface is realized, the atomic scale flattened silicon surface is obtained by the HF/HCl wet-etching process, and then the silicon surface is oxidized by radicals generated in Kr/O2 mixed high-density microwave-excited plasma at 400°C. Applying these techniques, the trap density at the Si/SiO2 interface is markedly reduced since the surface roughness is minimized and Flicker noise is markedly reduced as compared with the conventional process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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WATANABE Kazufumi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Ishino Hideaki
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Tanaka Koutarou
Management Of Science And Technology Department Graduate School Of Engineering Tohoku University
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Sugawa Shigetoshi
Management Of Science & Technology Department School Of Engineering Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 04, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 04, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ishino Hideaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tanaka Koutarou
Management of Science and Technology Department Graduate School of Engineering, Tohoku University, Aza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Watanabe Kazufumi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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