Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
スポンサーリンク
概要
- 論文の詳細を見る
High-quality SiO2 film formation is important for many applications, such as large-scale integration (LSI) circuit and micro-electro-mechanical system (MEMS) industries. We evaluated the structural and electrical insulation properties of SiO2 films using an organosiloxane-based silica sol–gel precursor derived from a mixture of tetraethoxysilane (TEOS) and methyltrimethoxysilane (MTMS) by changing the molar ratio of TEOS/MTMS. This sol–gel precursor was converted not only to a low-dielectric-constant film with a relative dielectric constant of 2.8 but also to a dense SiO2 film by optimizing baking conditions. The dense SiO2 film from this sol–gel precursor has excellent dielectric characteristics of low leakage current density and high breakdown voltage, whose values are comparable to those of thermal oxide SiO2 films. Furthermore, the breakdown field intensity of these films was improved by adding a small amount of metal oxides, such as TiO2, HfO2, and ZrO2. A maximum breakdown field intensity of 15 MV/cm can be achieved in the case of 10% TiO2 addition.
- 2010-11-25
著者
-
Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
-
Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
-
Inokuchi Atsutoshi
New Industry Creation Hatchery Center Tohoku University
-
Watanuki Kohei
New Industry Creation Hatchery Center Tohoku University
-
Shirai Yasuyuki
New Industry Creation Hatchery Center (niche) Tohoku University
-
Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
-
Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
-
Banba Akinori
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Suzuki Hirokazu
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Koike Tadashi
Ube-Nitto Kasei Co., Ltd., 2-1-1 Yabutanishi, Gifu 500-8386, Japan
-
Adachi Tatsuhiko
Ube-Nitto Kasei Co., Ltd., 2-1-1 Yabutanishi, Gifu 500-8386, Japan
-
Watanuki Kohei
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Shirai Yasuyuki
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Sugawa Shigetoshi
Graduate School of Engineering, Tohoku University, Aza-Aoba 6-6-11, Aramaki, Aoba-ku, Sendai 980-8579, Japan
関連論文
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- Subvector-Based Fast Encoding Method for Vector Quantization Without Using Two Partial Variances
- Performance Comparison between Equal-Average Equal-Variance Equal-Norm Nearest Neighbor Search (EEENNS) Method and Improved Equal-Average Equal-Variance Nearest Neighbor Search (IEENNS) Method for Fast Encoding of Vector Quantization(Image Processing and
- Fast Encoding Method for Image Vector Quantization Based on Multiple Appropriate Features to Estimate Euclidean Distance
- A Fast Encoding Method for Vector Quantization Using Modified Memory-Efficient Sum Pyramid
- A Fast Search Method for Vector Quantization Using Enhanced Sum Pyramid Data Structure(Image)
- An Improved Fast Encoding Algorithm for Vector Quantization Using 2-Pixel-Merging Sum Pyramid and Manhattan-Distance-First Check(Image Processing, Image Pattern Recognition)
- A Fast Encoding Method for Vector Quantization Using L_1 and L_2 Norms to Narrow Necessary Search Scope(Image Processing, Image Pattern Recognition)
- A Fast Encoding Method for Vector Quantization Based on 2-Pixel-Merging Sum Pyramid Data Structure(Image)
- A nonlinear cepstral compensation method for noisy speech processing (音声言語情報処理 研究報告 第1回音声言語シンポジウム(SPLC))
- Extracting person's speech individually from original records of meeting by speaker identification technique
- Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
- Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
- Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
- High Sensitivity Dynamic Range Enhanced CMOS Imager with Noise Suppression
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
- Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
- A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
- A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
- Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
- High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
- Ferroelectric Sr_2(Ta_, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
- Impurity Measurement in Specialty Gases Using an Atmospheric Pressure Ionizaiton Mass Spectrometer with a Two-Compartment Ion Source
- Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source
- Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects (Special issue: Advanced metallization for ULSI applications)
- Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
- A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
- Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
- MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
- Adsorption Behavior of Various Fluorocarbon Gases on Silicon Wafer Surface
- A Low-Dielectric-Constant Sr_2(Ta_, Nb_x)_2O_7 Thin Film Controlling the Crystal Orientation on an IrO_2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- Study of the Reflectivity of Silver Films Deposited by Radio Frequency and Direct Current Coupled Magnetron Sputtering
- Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
- Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
- A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor
- Light-Emitting Diode Based on ZnO by Plasma-Enhanced Metal–Organic Chemical Vapor Deposition Employing Microwave Excited Plasma
- The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
- The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films
- Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
- A New Statistical Evaluation Method for the Variation of MOSFETs
- Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
- Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
- Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
- Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
- A Comparative Examination of Polyoxide Films Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted (400℃) Oxidation Techniques
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
- Perfectly Etching Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF Gas
- Large-scale test circuits for high-speed and highly accurate evaluation of variability and noise in metal-oxide-semiconductor field-effect transistor electrical characteristics
- Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency
- Fast Gas Replacement in Plasma Process Chamber by Improving Gas Flow Pattern
- Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
- High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression
- A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
- Gas Flow Characteristics in a Plasma Process Chamber and Proposal of New Pulse-Controlled Gas Injection Method Using Interference Matrix Operation for Rapid Stabilization of Gas Pressure
- Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO2 Substrates
- Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory
- Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts
- Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O2/NO Plasma Oxynitridation
- Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
- Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films
- Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors
- Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
- High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
- A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits
- Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced Metal Organic Chemical Vapor Deposition
- A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma
- Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device
- Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
- Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
- High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
- Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
- Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors
- Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors
- A 2.8 μm Pixel-Pitch 55 ke
- On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
- Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
- Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon
- Adhesion Characteristics of Magnetron-Sputter-Deposited Copper on Smooth Cycloolefin for Realizing Wiring with High-Frequency Signal Propagation
- A Column-Parallel Hybrid Analog-to-Digital Converter Using Successive-Approximation-Register and Single-Slope Architectures with Error Correction for Complementary Metal Oxide Silicon Image Sensors
- New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors