A 2.8 μm Pixel-Pitch 55 ke

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概要

• 論文の詳細を見る

• In this paper, a global-shutter complementary metal oxide semiconductor (CMOS) image sensor using lateral overflow integration capacitor (LOFIC) in each pixel without trade-offs between full-well capacity (FWC) and dark current and between FWC and pixel size has been demonstrated. Because the FWC is determined only by LOFIC, a photodiode (PD) and storage diffusion capacitor (SD) are designed focusing on achieving low dark current performance especially. A 2.8 μm pixel pitch Bayer-RGB color CMOS image sensor with the pinned diffusion capacitor for the storage node was fabricated and achieved both 83.3 e^-/s at the PD and 58.3 e^-/s at the SD dark current at 60 °C and about 55 ke^-full well capacity. A high resolution performance, a high FWC performance and a low dark current performance were simultaneously achieved in this image sensor.

• 2013-04-25

著者

• Kuroda Rihito

  Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Sakai Shin

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Tashiro Yoshiaki

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Sugawa Shigetoshi

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

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