White–Red–Green–Blue Lateral Overflow Integration Capacitor Complementary Metal–Oxide–Semiconductor Image Sensor with Color-Independent Exposure and Widely-Spectral High Sensitivity

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概要

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• A high sensitivity white–red–green–blue (WRGB) complementary metal–oxide–semiconductor (CMOS) image sensor is proposed with color-independent saturation exposure based on lateral overflow integration capacitor (LOFIC) architecture. In case of conventional WRGB image sensors, the W pixels saturate in lower illuminance than the other pixels due to the same saturation exposure of all pixels. This WRGB LOFIC CMOS image sensor solves this problem by optimizing the size of LOFICs for each pixel color according to its sensitivity. The white (W) pixels have about 2.3 times higher sensitivity than the green (G) pixels and have 102-dB dynamic range (DR). Moreover, W pixels without infrared (IR) cut filter have high sensitivity for luminance through visible light band to near IR wave band. This image sensor realize that good color reproductivity imaging for the visible waveband and high sensitivity imaging for a wide waveband by one image sensor.

• 2010-04-25

著者

• Shigetoshi Sugawa

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Sakai Shin

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Tashiro Yoshiaki

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Kawada Shun

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Yoshiaki Tashiro

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Shin Sakai

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Shun Kawada

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

関連論文

• White–Red–Green–Blue Lateral Overflow Integration Capacitor Complementary Metal–Oxide–Semiconductor Image Sensor with Color-Independent Exposure and Widely-Spectral High Sensitivity
• Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor
• A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits
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