Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor

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概要

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• Two wide dynamic range (DR) complementary metal oxide silicon (CMOS) image sensors (CIS) with lateral overflow integration capacitor (LOFIC) have been developed in order to scale down the pixel size. A checker-pattern CIS has achieved high area-efficiency for the full well capacity (FWC) by introducing the rectangle structure and placing the color-filters and on-chip microlens along the direction at an angle of 45°. A shared two pixels CIS has achieved small pixel pitch by introducing a lateral overflow gate that overflows over-saturated photoelectrons from the photodiode to the LOFIC directly. These CISs were fabricated using the 0.18-μm 2-polycrystalline 3-metal CMOS technology with buried-pinned-photodiode process and achieved the high FWC, low noise, wide DR and high resolution performances. These structures are effective for obtaining the small pixel size with the advantageous characteristics of LOFIC CIS. In this paper, these structures, operation methods and measurement results of these CISs have been discussed.

• 2010-04-25

著者

• Shigetoshi Sugawa

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Rihito Kuroda

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Sakai Shin

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Tashiro Yoshiaki

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Kawada Shun

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Nana Akahane

  DISP Development, Texas Instruments Japan, Miho, Ibaraki 300-0496, Japan

• Koichi Mizobuchi

  DISP Development, Texas Instruments Japan, Miho, Ibaraki 300-0496, Japan

• Koichi Mizobuchi

  DISP Development, Texas Instruments Japan, Inashiki, Ibaraki 300-0496, Japan

関連論文

• White–Red–Green–Blue Lateral Overflow Integration Capacitor Complementary Metal–Oxide–Semiconductor Image Sensor with Color-Independent Exposure and Widely-Spectral High Sensitivity
• Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor
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