A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

スポンサーリンク

概要

• 論文の詳細を見る

• A low noise complementary metal–oxide–semiconductor (CMOS) image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-in., 4.5-μm pitch, $800^{\text{H}}\times 600^{\text{V}}$ pixels CMOS image sensor fabricated by a 0.18-μm 2-poly 3-metal CMOS technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 104-μV/e- conversion gain, 2.0-e- total random noise, 110,000-e- full well capacity and 95-dB dynamic range in one exposure. Moreover, the random noise of the developed readout circuits has been reduced to 0.5-e- without degradation of saturation performance. As a result, the behaviors of pixel noises have been accurately measured. Operating condition dependency of the random noise generated by pixel transistors has been measured by using the developed readout circuits. In addition, considering the result of the measurements, we optimize pixel operating condition.

• 2010-04-25

著者

• Mizobuchi Koichi

  Disp Development Texas Instruments Japan

• Lee Woonghee

  Graduate School Of Engineering Tohoku University

• Shigetoshi Sugawa

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Koichi Mizobuchi

  DISP Development, Texas Instruments Japan, Inashiki, Ibaraki 300-0496, Japan

• Kohara Takahiro

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Takahiro Kohara

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

関連論文

• High Sensitivity Dynamic Range Enhanced CMOS Imager with Noise Suppression
• White–Red–Green–Blue Lateral Overflow Integration Capacitor Complementary Metal–Oxide–Semiconductor Image Sensor with Color-Independent Exposure and Widely-Spectral High Sensitivity
• Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor
• A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits
• Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise
• Analysis of Hundreds of Time Constant Ratios and Amplitudes of Random Telegraph Signal with Very Large Scale Array Test Pattern
• High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression
• Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors

スポンサーリンク