Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise

スポンサーリンク

概要

• 論文の詳細を見る

• Random telegraph signal (RTS) noise has become one of the most important problems in the continuous scaling down of field-effect transistors (FETs). In this study, we investigate experimentally the relationship between RTS amplitude and channel doping concentration ($N_{\text{A}}$), which is a key parameter related to threshold voltage adjustment and short-channel effects, in 393,216 n-type FETs by a high-speed measurement method. We demonstrate that $N_{\text{A}}$ has a significant effect on RTS amplitude even at approximately the same interface and bulk trap densities of the gate insulator films, which are evaluated by the charge pumping method, by the quasi-static capacitance–voltage method, and on the basis of $1/f$ noise characteristics. An increase in RTS amplitude may arise from a more advanced channel nonuniformity as $N_{\text{A}}$ increases.

• 2010-04-25

著者

• Abe Kenichi

  Graduate School Of Engineering Tohoku University

• Watabe Shunichi

  Graduate School Of Engineering Tohoku University

• Takafumi Fujisawa

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Shigetoshi Sugawa

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Tadahiro Ohmi

  New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Yutaka Kamata

  OKI Semiconductor Miyagi Co., Ltd., Ohira, Miyagi 981-3693, Japan

• Katsuhiko Shibusawa

  OKI Semiconductor Miyagi Co., Ltd., Ohira, Miyagi 981-3693, Japan

• Tadahiro Ohmi

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

関連論文

• Low frequency noise in Si(100) and Si(110) p-channel MOSFETs (シリコン材料・デバイス)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• Control of nitrogen profile in radical nitridation of SiO_2 films
• Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
• Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
• Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
• Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
• Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
• Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
• Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
• A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
• Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
• Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
• Econometric Analysis of the Effects of Zoning Ordinance on Residential Land Price
• Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects (Special issue: Advanced metallization for ULSI applications)
• Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
• Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
• MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
• Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
• Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
• Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process
• High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma
• White–Red–Green–Blue Lateral Overflow Integration Capacitor Complementary Metal–Oxide–Semiconductor Image Sensor with Color-Independent Exposure and Widely-Spectral High Sensitivity
• Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor
• A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits
• Light-Emitting Diode Based on ZnO by Plasma-Enhanced Metal–Organic Chemical Vapor Deposition Employing Microwave Excited Plasma
• Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
• A New Statistical Evaluation Method for the Variation of MOSFETs
• Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
• Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
• Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
• Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
• Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
• Large-scale test circuits for high-speed and highly accurate evaluation of variability and noise in metal-oxide-semiconductor field-effect transistor electrical characteristics
• In situ Observation of Grain Growth on Electroplated Cu Film by Electron Backscatter Diffraction
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory
• Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise
• Analysis of Hundreds of Time Constant Ratios and Amplitudes of Random Telegraph Signal with Very Large Scale Array Test Pattern
• Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency
• Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation
• Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
• Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
• Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
• Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
• Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO2 Substrates
• Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts
• Lattice Distortion at SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering Spectroscopy/Channeling
• Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O2/NO Plasma Oxynitridation
• Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
• High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
• Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization
• Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films
• Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors
• Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
• High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
• A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits
• Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced Metal Organic Chemical Vapor Deposition
• A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
• A Technology for Reducing Flicker Noise for ULSI Applications
• Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
• Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma
• Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
• Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
• High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
• Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
• Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors
• High Quality SiO
• Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
• On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
• Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
• Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon
• Noise Performance of Accumulation MOSFETs
• New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

もっと見る 閉じる

スポンサーリンク