A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device

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概要

• 論文の詳細を見る

• The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3 V) under $\pm 5$ V operation and a long retention time (${>}10$ h) has successfully been fabricated.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Goto Tetsuya

  New Industry Creation Hatchery Center Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Hirayama Masaki

  New Industry Creation Hatchery Center Tohoku University

• Funaiwa Kiyoshi

  New Industry Creation Hatchery Center Tohoku University

• TAKAHASHI Ichirou

  New Industry Creation Hatchery Center, Tohoku University

• YAMADA Atsuhiko

  Graduate School of Engineering, Tohoku University

• Sakurai Hiroyuki

  New Industry Creation Hatchery Center Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Hirayama Masaki

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Takahashi Ichirou

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Yamada Atsuhiko

  Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Ohmi Tadahiro

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Goto Tetsuya

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Funaiwa Kiyoshi

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

• Sakurai Hiroyuki

  New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan

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