Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors

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概要

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• The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium--gallium--zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe case is observed; typically, the saturation-region field-effect mobility is increased from {\sim}10 cm²V^-1s^-1in the Ar case to {\sim}13 cm²V^-1s^-1in the Xe case. The Hall mobility is also higher in the Xe case in the carrier density range of approximately 10^{17}--10^{18} cm^-3. These results suggest that the Xe sputtering can reduce film damage, and improve film quality.

• 2013-05-25

著者

• SUGAWA Shigetoshi

  New Industry Creation Hatchery Center, Tohoku University

• Goto Tetsuya

  New Industry Creation Hatchery Center Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

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