Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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AHARONI Herzl
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Saito Yuji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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SUGAWA Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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OHTSUBO Kazuo
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
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SEKINE Katsuyuki
Department of Electronic Engineering, Graduate school of Engineering, Tohoku University
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HIRAMAYA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Saito Y
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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SUGAWA Sigetoshi
Tohoku University
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Hirayama Masaki
Toshiba Corporation
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
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Ohtsubo Kazuo
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Saito Yuji
Department Of Anesthesiology Gunma Prefectural Cardiovascular Center
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Sekine K
Japan Aviation Electronics Ind. Ltd. Tokyo Jpn
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Sekine Katsuyuki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Aharoni Herzl
Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 84105, Israel
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