Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• SHIBATA Tadashi

  Department of Physics,Faculty of Science,Osaka University

• Shibata Tadashi

  Department Of Information And Communication Engineering The University Of Tokyo

• Nakada A

  Vlsi Design And Education Center The University Of Tokyo

• Shibata T

  Univ. Tokyo Tokyo Jpn

• Shibata T

  Department Of Information And Communication Engineering The University Of Tokyo

• Ohmi Tadahiro

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• NAKADA Akira

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• AHARONI Herzl

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• OKA Mauricio

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• TAMAI Yukio

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• Shibata Tadashi

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Aharoni Herzl

  東北大学未来科学技術共同研究センター

• Oka Maurichio

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Ohmi Tadahiro

  Department Of Electronic Engineering

• Tamai Yukio

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Shibata T

  Ntt Photonics Laboratories Ntt Corporation:(present Address)ntt Science And Core Technology Group Nt

• Aharoni Herzl

  Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 84105, Israel

• Shibata Tadashi

  Department of Electrical Engineering and Information System, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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