Dielectric Relaxation Effect of Traveling Carriers in the Semiconductors
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概要
- 論文の詳細を見る
The conduction of an infinitesimally thin layer of carriers is in a small signal approximation described in the semiconductor sample biased at a uniform electric field where the dielectric relaxation time is comparable to the transit time of carriers. The discussion is concentrated on the dielectric relaxation effect of the traveling majority and minority carriers. It is shown that the dielectric relaxation effect of the traveling majority carriers is just same as that of the static ones while the effective dielectric relaxation time for the traveling minority carriers becomes longer than that for the static ones.
- 社団法人応用物理学会の論文
- 1972-04-05
著者
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Kodama Toshikazu
Department Of Electronics Tokyo Institute Of Technology
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Ohmi Tadahiro
Department Of Electronic Engineering
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Ohmi Tadahiro
Department Of Electronics Tokyo Institute Of Technology
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