Kuroda Rihito | Graduate School Of Engineering Tohoku University

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概要

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著作論文

High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
Large-scale test circuits for high-speed and highly accurate evaluation of variability and noise in metal-oxide-semiconductor field-effect transistor electrical characteristics
Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films
A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits
Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors
A 2.8 μm Pixel-Pitch 55 ke
On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
A Column-Parallel Hybrid Analog-to-Digital Converter Using Successive-Approximation-Register and Single-Slope Architectures with Error Correction for Complementary Metal Oxide Silicon Image Sensors
Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors

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