Cheng Weitao | New Industry Creation Hatchery Center Tohoku University
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概要
関連著者
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Cheng Weitao
New Industry Creation Hatchery Center Tohoku University
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
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Hirayama Masaki
Toshiba Corporation
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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WEITAO Cheng
Graduate School of Engineering, Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S
Graduate School Of Engineering Tohoku University
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Cheng Weitao
Graduate School of Engineering, Tohoku University
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大見 忠弘
東北大学
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Ohshima Ichiro
Dept. Of E/e Tohoku University
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SUGAWA Shigetoshi
Graduate School of Engineering, Tohoku University
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Teramoto A
New Industry Creation Hatchery Center Tohoku University
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Kuroda Rihito
Graduate School Of Engineering Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering Tohoku University
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Ohmi Tadahiro
The New Industry Creation Hatchery Center (niche) Tohoku University
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Tye Ching
Graduate School Of Engineering Tohoku University
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CHENG Weitao
New Industry Creation Hatchery Center, Tohoku University
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NAKAO Shin-ichi
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo
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Nakao Shin-ichi
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Nakao Shin-ichi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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HIRAYAMA Masaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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SUGAWA Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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AHARONI Herzl
New Industry Creation Hatchery Center, Tohoku University
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Ohshima Ichiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Ohmi T
Tohoku Univ. Sendai‐shi Jpn
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SHIMADA Hiroyuki
New Device Development Group, SEIKO EPSON Corporation
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CHENG Weitao
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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ONO Yasuhiro
New Device Development Group, SEIKO EPSON Corporation
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Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Hirayama Masaki
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
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Shimada Hiroyuki
New Industry Creation Hatchery Center Tohoku University
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Nakao Shin-ichi
Department Of Anesthesia Kyoto University Hospital
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Teramoto Akinobu
University Of Tohoku New Industry Creation Hatchery Center (niche)
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Ono Yasuhiro
New Device Development Group Seiko Epson Corporation
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Tye ChingFoa
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Cheng Weitao
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
著作論文
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
- Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits