KURODA Rihito | Graduate School of Engineering, Tohoku University

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著作論文

High current drivability FD-SOI CMOS with low Source/Drain series resistance (Silicon devices and materials)
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces

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