Li Xiang | Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
スポンサーリンク
概要
- Li Xiangの詳細を見る
- 同名の論文著者
- Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japanの論文著者
関連著者
-
Suwa Tomoyuki
New Industry Creation Hatchery Center Tohoku University
-
Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
-
Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
-
Li Xiang
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Kuroda Rihito
Graduate School Of Engineering Tohoku University
-
Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
-
Nakao Yukihisa
Graduate School of Engineering, Tohoku University
-
Li Xiang
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
-
Muro Takayuki
Japan Synchrotron Radiation Res. Inst. Hyogo Jpn
-
Tanaka Hiroaki
New Industry Creation Hatchery Center Tohoku University
-
SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
-
HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
-
KUMAGAI Yuki
Graduate School of Engineering Tohoku University
-
Konda Masahiro
New Industry Creation Hatchery Center Tohoku University
-
Abe Kenichi
Graduate School Of Engineering Tohoku University
-
Isogai Tatsunori
Graduate School Of Engineering Tohoku University
-
Kinoshita Toyohiko
Japan Synchrotron Radiation Res. Inst./spring‐8 Hyogo Jpn
-
Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
-
Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
-
Kuroda Rihito
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
-
Konda Masahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Hasebe Rui
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Sugawa Shigetoshi
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
-
Sugawa Shigetoshi
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
-
Suwa Tomoyuki
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
-
Suwa Tomoyuki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Nakao Yukihisa
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Isogai Tatsunori
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Yamamoto Masashi
Stella Chemifa Corporation, Sakai 590-0982, Japan
-
Muro Takayuki
Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
-
Kinoshita Toyohiko
Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
-
Abe Kenichi
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
著作論文
- Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
- Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
- Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
- On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology