Adsorption Behavior of Various Fluorocarbon Gases on the Silicon Wafer Surface
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kato Takeyoshi
University Of Tohoku New Industry Creation Hatchery Center (niche)
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HIDAKA Atsushi
University of Tohoku, Department of Electronic Engineering, Graduate School of Engineering
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YAMASHITA Satoru
University of Tohoku, New Industry Creation Hatchery Center (NICHe)
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SHIRAI Yasuyuki
University of Tohoku, New Industry Creation Hatchery Center (NICHe)
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OHMI Tadahiro
University of Tohoku, New Industry Creation Hatchery Center (NICHe)
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Hidaka Atsushi
University Of Tohoku Department Of Electronic Engineering Graduate School Of Engineering
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YAMASHITA Satoru
New Industry Creation Hatchery Center, Tohoku University
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Shirai Yasuyuki
New Industry Creation Hatchery Center Tohoku University
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Yamashita Satoru
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
University Of Tohoku New Industry Creation Hatchery Center (niche)
関連論文
- Impurity Measurement in Specialty Gases Using an Atmospheric Pressure Ionizaiton Mass Spectrometer with a Two-Compartment Ion Source
- Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source
- Adsorption Behavior of Various Fluorocarbon Gases on Silicon Wafer Surface
- Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
- Adsorption Behavior of Various Fluorocarbon Gases on the Silicon Wafer Surface
- Precise Control of Gas Concentration Ratio in Process Chamber : Instrumentation, Measurement, and Fabrication Technology
- Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2