Hirayama Masaki | New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
スポンサーリンク
概要
- Hirayama Masakiの詳細を見る
- 同名の論文著者
- New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japanの論文著者
関連著者
-
Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
-
Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
-
TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
-
Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
-
Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
-
Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Sakurai Hiroyuki
New Industry Creation Hatchery Center Tohoku University
-
Isogai Tatsunori
Graduate School Of Engineering Tohoku University
-
Azumi Keita
New Industry Creation Hatchery Center Tohoku University
-
Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Azumi Keita
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Takahashi Ichirou
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Sugawa Shigetoshi
Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Isogai Tatsunori
Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Sakurai Hiroyuki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
著作論文
- Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
- Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor