ISHIKAWA Hiraku | TOKYO ELECTRON LTD.
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概要
関連著者
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ISHIKAWA Hiraku
TOKYO ELECTRON LTD.
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NOZAWA Toshihisa
TOKYO ELECTRON LTD.
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MATSUOKA Takaaki
TOKYO ELECTRON LTD.
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ITO Takashi
Graduate School of Engineering, Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Teramoto A
New Industry Creation Hatchery Center Tohoku University
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Ohmi T
Tohoku Univ. Sendai‐shi Jpn
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Hirayama Masaki
Toshiba Corporation
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Terasaki Masato
Tokyo Electron Ltd.
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Takahashi Ichirou
Graduate School Of Engineering Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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Teramoto Akinobu
University Of Tohoku New Industry Creation Hatchery Center (niche)
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Matsuoka Takaaki
Tokyo Electron Technology Development Institute, Inc., Sendai 981-3131, Japan
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Nozawa Toshihisa
Tokyo Electron Technology Development Institute, Inc., Sendai 981-3131, Japan
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Ito Takashi
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
著作論文
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization