Kambayashi Hiroshi | Advanced Power Device Research Association, Yokohama 220-0073, Japan
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概要
- Kambayashi Hiroshiの詳細を見る
- 同名の論文著者
- Advanced Power Device Research Association, Yokohama 220-0073, Japanの論文著者
関連著者
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Nomura Takehiko
Advanced Power Device Research Association, Yokohama 220-0073, Japan
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Ueda Hirokazu
Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan
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Kambayashi Hiroshi
Advanced Power Device Research Association, Yokohama 220-0073, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Sugawa Shigetoshi
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Harada Katsushige
Tokyo Electron Tohoku Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Morozumi Yuichiro
Tokyo Electron Tohoku Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Hasebe Kazuhide
Tokyo Electron Tohoku Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Kato Sadahiro
Advanced Power Device Research Association, Yokohama 220-0073, Japan
著作論文
- High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
- High Quality SiO