Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• A robust fluorocarbon film was successfully deposited on a substrate at a temperature above 400 °C by the new microwave plasma-enhanced chemical vapor deposition (MWPE-CVD) method using the linear C5F8 precursor instead of a conventional cyclic C5F8 one. The fluorocarbon performed keeping the dielectric constant low as a value of 2.25 by controlling the molecular structure forming cross-linked poly(tetrafluoroethylene) (PTFE) chains with configurational carbon atoms. The novel fluorocarbon demonstrates less fluorine degassing at an elevated temperature, with high mechanical strength and without degradation of adhesion of the fluorocarbon film to SiCN and SiOx stacked films after thermal stress at 400 °C and 1 atm N2 for 1 h. Consequently, this robust fluorocarbon film is considered a promising candidate for general porous silicon materials with applications to practical integration processes as an interlayer dielectric.

• 2012-05-25

著者

• MATSUMOTO Hirokazu

  Zeon Corporation

• NOZAWA Toshihisa

  TOKYO ELECTRON LTD.

• MATSUOKA Takaaki

  TOKYO ELECTRON LTD.

• Kikuchi Yoshiyuki

  Tokyo Metropolitan Matsuzawa Hospital

• Nemoto Takenao

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Miyatani Kotaro

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Kobayashi Yasuo

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Kawamura Kohei

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Nakamura Masahiro

  Zeon Corporation, Chiyoda, Tokyo 100-8246, Japan

• Ito Azumi

  Zeon Corporation, Chiyoda, Tokyo 100-8246, Japan

• Shirotori Akihide

  Zeon Corporation, Chiyoda, Tokyo 100-8246, Japan

• Miyatani Kotaro

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Kikuchi Yoshiyuki

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Kobayashi Yasuo

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Matsuoka Takaaki

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Nozawa Toshihisa

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

関連論文

• Stereospecific Ring-Opening Metathesis Polymerization of endo-Dicyclopentadiene by Schrock-Hoveyda Catalyst and Novel Mo- and W-based Complexes. Development of Crystalline Hydrogenated Poly(endo-dicyclopentadiene)
• The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
• Guidelines for Physical Therapy in Physically Disabled Schizophrenic Patients
• Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
• High-Quality SiO2 Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas
• Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition
• Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
• Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization

スポンサーリンク