Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain
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概要
- 論文の詳細を見る
Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of $20\times 2$ μm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Kotani Koji
Graduate School Of Engineering Tohoku University
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ITO Takashi
Graduate School of Engineering, Tohoku University
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Numata Masayuki
Graduate School Of Engineering Tohoku University
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ZHU Xiaoli
Graduate School of Engineering, Tohoku University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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FUJII Shuntaro
Graduate School of Engineering, Tohoku University
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Numata Masayuki
Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ito Takashi
Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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